GB/T 20176-2006 Active National standards

GB/T 20176-2006 Surface chemical analysis—Secondary-ion mass spectrometry—Determination of boron atomic concentration in silicon using uniformly doped materials

Publish Date: 2006-03-27 Implement Date: 2006-11-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 20176-2006

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Electronic optics and other physical optical instruments

ICS Name: Chemical analysis

Publish Date: 2006-03-27

Implement Date: 2006-11-01

Pages: 19 pages

Scope

This standard details the secondary ion mass spectrometry method for determining the atomic concentration of boron in single-crystal silicon using calibrated uniformly doped materials (calibrated with reference materials injected with boron). It is suitable for uniformly doped boron concentrations ranging from 1×10 16 atoms/cm 3 to 1×10 20 atoms/cm 3.