GB/T 3656-1983
Replaced
GB/T 42905-2023
Active
National standards
GB/T 42905-2023 Test method for thickness of silicon carbide epitaxial layer—Infrared reflectance method
GB/T 42905-2023 Test method for thickness of silicon carbide epitaxial layer—Infrared reflectance method
Basic Information
Standard Code:
GB/T 42905-2023
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
\nTest methods for the physical properties of metals
ICS Name:
\nMetal material testing
Publish Date:
2023-08-06
Implement Date:
2024-03-01
Publisher:
国家市场监督管理总局、国家标准化管理委员会
Technical Committee:
全国半导体设备和材料标准化技术委员会(SAC/TC 203)、全国半导体设备和材料标准化技术委员会材料分技术委员会(SAC/TC 203/SC 2)
Pages:
7 pages
Scope
本文件描述了采用红外反射法测试碳化硅外延层厚度的方法。
本文件适用于n型掺杂浓度大于1×1018 cm-3的碳化硅衬底上同质掺杂浓度小于1×1016 cm-3的同质碳化硅外延层厚度的测试，测试范围为3 μm～200 μm。
Development Information
Drafting Units:
安徽长飞先进半导体有限公司、安徽芯乐半导体有限公司、河北普兴电子科技股份有限公司、广东天域半导体股份有限公司、南京国盛电子有限公司、浙江芯科半导体有限公司、布鲁克(北京)科技有限公司、中国科学院半导体研究所、有色金属技术经济研究院有限责任公司
Drafting Persons:
钮应喜、刘敏、袁松、赵丽霞、丁雄杰、吴会旺、仇光寅、李素青、李京波、张会娟、赵跃、彭铁坤、雷浩东、闫果果
Referenced Standards
GB/T 6379.2-2004 Accuracy(trueness and precision)of measurement methods and results—Part 2:Basic method for the determination of repeatability and reproducibility of a standard measurement method
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
Related Standards
GB/T 3657-1983
Replaced
GB/T 3657-1983 Measurement method of direct magnetic properties of soft magnetic alloys
GB/T 3849-1983
Replaced
GB/T 3849-1983 Hardmetals—Rockwell hardness (scale A) test method
GB/T 3850-1983
Replaced
GB/T 3850-1983 Impermeable sintered metal materials and hardmetals—determination of density
GB/T 3851-1983
Replaced
GB/T 3851-1983 Hardmetals—determination of transverse rupture strength
GB/T 4326-1984
Replaced