T/ZZB 3936-2025 Active Group standards

T/ZZB 3936-2025 Medium to high voltage insulated-gate bipolar transistor(IGBT) driver

T/ZZB 3936-2025 Medium to high voltage insulated-gate bipolar transistor(IGBT) driver

Publish Date: 2025-12-20 Implement Date: 2025-12-31 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us
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Basic Information

Standard Code: T/ZZB 3936-2025
Standard Type: Group standards
Standard Status: Active
is_force_gb: no
CCS Name: Normal diagnostic instruments
ICS Name: Integrated Components of Semiconductor Devices
Publish Date: 2025-12-20
Implement Date: 2025-12-31

Scope

This document specifies the operating conditions, basic requirements, technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, and quality commitments for medium- and high-voltage insulated gate bipolar transistor (IGBT) drivers. This document is applicable to insulated gate bipolar transistor drivers with voltage ratings of 1200 V, 1700 V, 3300 V, 4500 V, and 6500 V, used in fields such as new energy and industrial control.

Development Information

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