GB/T 6616-2009
GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
Abstract
This standard specifies the method of measuring the resistivity of semiconductor silicon wafers and the thin-film sheet resistance using non-contact eddy currents.
This standard is applicable to the measurement of the resistivity of silicon single-crystal cut wafers, grinded wafers, and polished wafers (referred to as silicon wafers) with a diameter or edge length greater than 25 mm and a thickness of 0.1 mm to 1 mm, as well as the thin-film sheet resistance of silicon. When measuring the thin-film sheet resistance, the effective sheet resistance of the substrate should be at least 1,000 times that of the thin-film sheet resistance.
The measurement ranges of the resistivity of silicon wafers and the thin-film sheet resistance are 1.0×10-3Ω·cm to 2×102Ω·cm and 2×103Ω/ to 3×103Ω/ respectively.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Replaced |
| Standard Code | GB/T 6616-2009 |
| CCS | Semi-metals and semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2010-06-01 |