GB/T 6616-2009 Replaced National standards

GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge

Publish Date: 2009-10-30 Implement Date: 2010-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 6616-2009

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2009-10-30

Implement Date: 2010-06-01

Pages: 7 pages

Scope

This standard specifies the method of measuring the resistivity of semiconductor silicon wafers and the thin-film sheet resistance using non-contact eddy currents.
This standard is applicable to the measurement of the resistivity of silicon single-crystal cut wafers, grinded wafers, and polished wafers (referred to as silicon wafers) with a diameter or edge length greater than 25 mm and a thickness of 0.1 mm to 1 mm, as well as the thin-film sheet resistance of silicon. When measuring the thin-film sheet resistance, the effective sheet resistance of the substrate should be at least 1,000 times that of the thin-film sheet resistance.
The measurement ranges of the resistivity of silicon wafers and the thin-film sheet resistance are 1.0×10-3Ω·cm to 2×102Ω·cm and 2×103Ω/ to 3×103Ω/ respectively.