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GB/T 46789-2025 Active
GB/T 46789-2025 Semiconductor devices—Mobile ion tests for metal-oxide semiconductor field effect transistors
Abstract
This document establishes a wafer-level test procedure for determining the number of mobile positive charges in the oxide layer of metal oxide semiconductor field-effect transistors (MOSFETs).
This document is applicable to active field-effect transistors and parasitic field-effect transistors. Mobile charges can cause degradation of semiconductor devices, such as changing the threshold voltage of MOSFETs or causing base-emitter reverse breakdown in bipolar transistors.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 46789-2025 |
| CCS | Semiconductor discrete devices |
| ICS | Integrated Components of Semiconductor Devices |
| Implement Date | 2026-07-01 |
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