GB/T 14264-1993
Replaced
GB/T 46789-2025
Active
National standards
GB/T 46789-2025 Semiconductor devices—Mobile ion tests for metal-oxide semiconductor field effect transistors
GB/T 46789-2025 Semiconductor devices—Mobile ion tests for metal-oxide semiconductor field effect transistors
Price:
$ 33.00
Basic Information
Standard Code:
GB/T 46789-2025
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semiconductor discrete devices
ICS Name:
Integrated Components of Semiconductor Devices
Publish Date:
2025-12-02
Implement Date:
2026-07-01
Pages:
12 pages
Scope
This document establishes a wafer-level test procedure for determining the number of mobile positive charges in the oxide layer of metal oxide semiconductor field-effect transistors (MOSFETs).
This document is applicable to active field-effect transistors and parasitic field-effect transistors. Mobile charges can cause degradation of semiconductor devices, such as changing the threshold voltage of MOSFETs or causing base-emitter reverse breakdown in bipolar transistors.
Development Information
Adopt standards
IEC 62417:2010
Related Standards
GB/T 14844-1993
Replaced
GB/T 14844-1993 Designations of semiconductor materials
GB/T 17573-1998
Active
GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1:General
GB/T 12560-1999
Active
GB/T 12560-1999 Semiconductor devices Sectional specification for discrete devices
GB/T 11499-2001
Active
GB/T 11499-2001 Letter symbols for discrete semiconductor devices
GB/T 20521-2006
Active