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GB/T 6621-2009 Active
GB/T 6621-2009 Testing methods for surface flatness of silicon slices
Abstract
This standard specifies the method of measuring the flatness of silicon wafers using capacitive displacement sensors. The methods can also be referenced for cutting wafers, grinding wafers, and corroded wafers.
This standard is applicable to measuring the surface flatness of standard diameter silicon wafers of 76 mm, 100 mm, 125 mm, 150 mm, and 200 mm, with a resistivity no greater than 200 Ω·cm and a thickness no greater than 1,000 μm, as well as visually describing the contour morphology of the silicon wafer surface.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 6621-2009 |
| CCS | Semi-metals and semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2010-06-01 |
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