GB/T 6621-2009 Active National standards

GB/T 6621-2009 Testing methods for surface flatness of silicon slices

Publish Date: 2009-10-30 Implement Date: 2010-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 6621-2009

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2009-10-30

Implement Date: 2010-06-01

Pages: 5 pages

Scope

This standard specifies the method of measuring the flatness of silicon wafers using capacitive displacement sensors. The methods can also be referenced for cutting wafers, grinding wafers, and corroded wafers.
This standard is applicable to measuring the surface flatness of standard diameter silicon wafers of 76 mm, 100 mm, 125 mm, 150 mm, and 200 mm, with a resistivity no greater than 200 Ω·cm and a thickness no greater than 1,000 μm, as well as visually describing the contour morphology of the silicon wafer surface.