GB/T 29056-2012
GB/T 29056-2012 Trichlorosilane for silicon epitaxy—Determination of boron,aluminium,phosphorus,vanadium,chrome,manganese,iron,cobalt,nickel,copper,arsenic,molybdenum and antimony content—Inductively coupled plasma mass spectrometric method
Abstract
This standard specifies the method for determining the trace element content of boron, aluminum, phosphorus, vanadium, chromium, manganese, iron, cobalt, nickel, copper, molybdenum, arsenic, and antimony in silicon epitaxy-grade trichlorosilane (SiHCl3) using inductively coupled plasma mass spectrometers (ICP-MS).
This standard is applicable to the determination of the content of boron, aluminum, phosphorus, vanadium, chromium, manganese, iron, cobalt, nickel, copper, molybdenum, arsenic, and antimony in silicon epitaxy-grade trichlorosilane (SiHCl3). The measurement ranges for each element are shown in Table 1.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Replaced |
| Standard Code | GB/T 29056-2012 |
| CCS | Electronic devices and specialized materials, parts, and structural components |
| ICS | Special materials for electronic technology |
| Implement Date | 2013-10-01 |