GB/T 19921-2018 Active

This standard specifies the method for testing the local light scatterers on the surfaces of polished wafers, epitaxial wafers, and other mirror-like wafers using a scanning surface inspection system, distinguishing between local light scatterers and extended light scatterers, and identifying and testing scattered light and reflected light. For silicon wafers used in processes with line widths of 130 nm to 11 nm, this standard provides settings for the scanning surface inspection system.
This standard is applicable to the detection, counting, and classification of local light scatterers on the surfaces of polished and epitaxial silicon wafers, as well as the detection and counting of scratches and native pits on the surfaces of polished and epitaxial silicon wafers. It also applies to the observation and identification of orange peel, ripples, haze, and conical and nodular defects on the surfaces of polished and epitaxial silicon wafers. This standard is equally applicable to the testing of local light scatterers on the surfaces of mirror-like wafers, such as germanium polished wafers and compound polished wafers.
Note: In this standard, polished and epitaxial wafers made of silicon, germanium, gallium arsenide, and other materials are collectively referred to as wafers.