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GB/T 45718-2025 Active
GB/T 45718-2025 Semiconductor devices—Time-dependent dielectric breakdown(TDDB) test for inter-metal layers
Abstract
This document describes the test method, test structure, and lifetime estimation method for time-dependent dielectric breakdown (TDDB) between metal layers in semiconductor devices.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 45718-2025 |
| CCS | Semiconductor discrete devices |
| ICS | Integrated Components of Semiconductor Devices |
| Implement Date | 2025-09-01 |
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