GB/T 14264-1993
Replaced
GB/T 45718-2025
Active
National standards
GB/T 45718-2025 Semiconductor devices—Time-dependent dielectric breakdown(TDDB) test for inter-metal layers
GB/T 45718-2025 Semiconductor devices—Time-dependent dielectric breakdown(TDDB) test for inter-metal layers
Price:
$ 44.00
Basic Information
Standard Code:
GB/T 45718-2025
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Semiconductor discrete devices
ICS Name:
Integrated Components of Semiconductor Devices
Publish Date:
2025-05-30
Implement Date:
2025-09-01
Pages:
20 pages
Scope
This document describes the test method, test structure, and lifetime estimation method for time-dependent dielectric breakdown (TDDB) between metal layers in semiconductor devices.
Development Information
Adopt standards
IEC 62374-1:2010
Related Standards
GB/T 14844-1993
Replaced
GB/T 14844-1993 Designations of semiconductor materials
GB/T 17573-1998
Active
GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1:General
GB/T 12560-1999
Active
GB/T 12560-1999 Semiconductor devices Sectional specification for discrete devices
GB/T 11499-2001
Active
GB/T 11499-2001 Letter symbols for discrete semiconductor devices
GB/T 20521-2006
Active