GB/T 30869-2014 Active
GB/T 30869-2014 Test method for thickness and total thickness variation of silicon wafers for solar cell
Abstract
This standard specifies the discrete and scanning measurement methods for the thickness and total thickness variation of silicon wafers used in solar cells (hereinafter referred to as "silicon wafers").
This standard applies to the measurement of the thickness and total thickness variation of silicon wafers that meet the dimensions specified in GB/T 26071 and GB/T 29055. The discrete measurement method is suitable for both contact and non-contact measurements, while the scanning measurement method is only applicable to non-contact measurements. Subject to the approval of the measuring instruments, this standard can also be used for measuring the thickness and total thickness variation of silicon wafers of other specifications.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 30869-2014 |
| CCS | \nTest methods for the physical properties of metals |
| ICS | \nMetal material testing |
| Implement Date | 2015-02-01 |