GB/T 30869-2014 Active National standards

GB/T 30869-2014 Test method for thickness and total thickness variation of silicon wafers for solar cell

Publish Date: 2014-07-24 Implement Date: 2015-02-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 30869-2014

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: \nTest methods for the physical properties of metals

ICS Name: \nMetal material testing

Publish Date: 2014-07-24

Implement Date: 2015-02-01

Pages: 7 pages

Scope

This standard specifies the discrete and scanning measurement methods for the thickness and total thickness variation of silicon wafers used in solar cells (hereinafter referred to as "silicon wafers").
This standard applies to the measurement of the thickness and total thickness variation of silicon wafers that meet the dimensions specified in GB/T 26071 and GB/T 29055. The discrete measurement method is suitable for both contact and non-contact measurements, while the scanning measurement method is only applicable to non-contact measurements. Subject to the approval of the measuring instruments, this standard can also be used for measuring the thickness and total thickness variation of silicon wafers of other specifications.