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GB/T 8760-2020 Active
GB/T 8760-2020 Test method for dislocation density of monocrystal gallium arsenide
Abstract
This standard specifies the test method for the dislocation density of GaAs single crystals.
This standard is applicable to the testing of dislocation density in GaAs single crystals with {100} and {111} faces, with a testing range of 0 cm-2 to 100,000 cm-2.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 8760-2020 |
| CCS | \nTest methods for the physical properties of metals |
| ICS | \nMetal material testing |
| Implement Date | 2021-08-01 |
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