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GB/T 1557-2006
GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption
Abstract
This standard specifies the method of determining the interstitial oxygen content in silicon single crystals using infrared spectroscopy. This standard is applicable to the measurement of interstitial oxygen content in n-type silicon single crystals with a room-temperature resistivity greater than 0.1 Ω·cm and p-type silicon single crystals with a room-temperature resistivity greater than 0.5 Ω·cm. The effective range of oxygen content measurement in this standard is from 1×1016 atoms/cm3 to the maximum solid solubility of interstitial oxygen in silicon.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Replaced |
| Standard Code | GB/T 1557-2006 |
| CCS | Analysis methods for semi-metallic and semiconductor materials |
| ICS | Comprehensive Testing of Metal Materials |
| Implement Date | 2006-11-01 |
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