PDF
GB/T 24574-2009 Active
GB/T 24574-2009 Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities
Abstract
This standard specifies the photoluminescence testing method for Group III-V impurities in silicon single crystals.
This standard is applicable to the simultaneous determination of the conductive impurities boron and phosphorus in low-dislocation single-crystal silicon.
This standard is used to detect various electroactive impurity elements with a concentration of 1×1011 atoms/cm3 to 5×1015 atoms/cm3 in single-crystal silicon.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 24574-2009 |
| CCS | Semi-metals and semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2010-06-01 |
Price
$ 54
Subtotal
$ 54
Tax
$ 0.00
Order Total (incl. tax)
$ 54