GB/T 24574-2009 Active National standards

GB/T 24574-2009 Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities

GB/T 24574-2009 Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities

Publish Date: 2009-10-30 Implement Date: 2010-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 24574-2009

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2009-10-30

Implement Date: 2010-06-01

Pages: 11 pages

Scope

This standard specifies the photoluminescence testing method for Group III-V impurities in silicon single crystals.
This standard is applicable to the simultaneous determination of the conductive impurities boron and phosphorus in low-dislocation single-crystal silicon.
This standard is used to detect various electroactive impurity elements with a concentration of 1×1011 atoms/cm3 to 5×1015 atoms/cm3 in single-crystal silicon.

Development Information

Word Count: 18 Thousand words Pages: 11 pages

Referenced Standards

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon GB/T 13389-2014 Practice for conversion between resistivity and dopant density for boron-doped,phosphorus-doped,and arsenic-doped silicon GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method

Adopt standards

SEMI MF 1389-0704

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