GB/T 33236-2016 Active
GB/T 33236-2016 Polycrystalline silicon—Determination of trace elements—Glow discharge mass spectrometry method
Abstract
This standard specifies the test method for measuring impurity elements in polycrystalline silicon using the glow discharge mass spectrometry (GDMS) method. This standard is applicable to the determination of the content of impurity elements in polycrystalline silicon materials, except for hydrogen and inert gas elements. The measurement range is from the detection limit of this method to 0.1% (mass fraction), and the detection limit is determined according to the instrument used and the measurement conditions. By correcting with appropriate standard samples, the content of impurity elements with a mass fraction greater than 0.1% can also be measured. Trace impurity elements in monocrystalline silicon materials can also be measured in accordance with this standard.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 33236-2016 |
| CCS | Basic standards and general methods |
| ICS | Chemical analysis |
| Implement Date | 2017-11-01 |