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GB/T 45720-2025 Active
GB/T 45720-2025 Semiconductor devices—Time dependent dielectric breakdown(TDDB)test for gate dielectric films
Abstract
This document describes the time-dependent dielectric breakdown (TDDB) test method for the gate dielectric layer of semiconductor devices, as well as the method for estimating the product lifespan in the event of TDDB failure.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 45720-2025 |
| CCS | Microcircuit |
| ICS | Integrated Components of Semiconductor Devices |
| Implement Date | 2025-09-01 |
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