GB/T 45720-2025 Active National standards

GB/T 45720-2025 Semiconductor devices—Time dependent dielectric breakdown(TDDB)test for gate dielectric films

Publish Date: 2025-05-30 Implement Date: 2025-09-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: GB/T 45720-2025

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Microcircuit

ICS Name: Integrated Components of Semiconductor Devices

Publish Date: 2025-05-30

Implement Date: 2025-09-01

Pages: 24 pages

Scope

This document describes the time-dependent dielectric breakdown (TDDB) test method for the gate dielectric layer of semiconductor devices, as well as the method for estimating the product lifespan in the event of TDDB failure.