DZ/T 0101.12-1994
Active
T/CASAS 032-2023
Active
Group standards
T/CASAS 032-2023 Determination of metal element content on the surface of silicon carbide wafers using inductively coupled plasma mass spectrometry
T/CASAS 032-2023 Determination of metal element content on the surface of silicon carbide wafers using inductively coupled plasma mass spectrometry
Price:
$ 20.00
Basic Information
Standard Code:
T/CASAS 032-2023
Standard Type:
Group standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
-
ICS Name:
-
Publish Date:
2023-06-19
Implement Date:
2023-06-19
Pages:
9 pages
Scope
Main technical content: This document describes the method of determining the content of metal elements on the surface of silicon carbide wafers by inductively coupled plasma mass spectrometry. This document is suitable for determining the content of trace metals such as sodium, aluminum, potassium, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, silver, tungsten, gold, and mercury on the surface of silicon carbide single-crystal polished wafers and silicon carbide epitaxial wafers, with a measurement range of 108 cm-2 to 1012 cm-2. This document is suitable for determining the content of trace metals on the surface of non-patterned silicon carbide wafers, including 100 mm (4 inch) to 200 mm (8 inch) silicon carbide native wafers and silicon carbide annealed wafers. Note: The content of metal elements on the surface of silicon carbide wafers is calculated in terms of the number of atoms per square centimeter.
Development Information
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