GB/T 14264-1993
Replaced
T/ZZB 3936-2025
Active
Group standards
T/ZZB 3936-2025 Medium to high voltage insulated-gate bipolar transistor(IGBT) driver
T/ZZB 3936-2025 Medium to high voltage insulated-gate bipolar transistor(IGBT) driver
Price:
$ 20.00
Basic Information
Standard Code:
T/ZZB 3936-2025
Standard Type:
Group standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Normal diagnostic instruments
ICS Name:
Integrated Components of Semiconductor Devices
Publish Date:
2025-12-20
Implement Date:
2025-12-31
Scope
This document specifies the operating conditions, basic requirements, technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, and quality commitments for medium- and high-voltage insulated gate bipolar transistor (IGBT) drivers. This document is applicable to insulated gate bipolar transistor drivers with voltage ratings of 1200 V, 1700 V, 3300 V, 4500 V, and 6500 V, used in fields such as new energy and industrial control.
Development Information
Related Standards
GB/T 14844-1993
Replaced
GB/T 14844-1993 Designations of semiconductor materials
GB/T 17573-1998
Active
GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1:General
GB/T 12560-1999
Active
GB/T 12560-1999 Semiconductor devices Sectional specification for discrete devices
GB/T 11499-2001
Active
GB/T 11499-2001 Letter symbols for discrete semiconductor devices
GB/T 20521-2006
Active