GB/T 14847-2010
GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
Abstract
This standard specifies the infrared reflection measurement method for the thickness of lightly doped silicon epitaxial layers on heavily doped substrates.
This standard is applicable to the measurement of the thickness of n-type and p-type silicon epitaxial layers, where the substrate has a resistivity of less than 0.02 Ω·cm at 23 °C and the epitaxial layer has a resistivity of more than 0.1 Ω·cm at 23 °C with a thickness greater than 2 μm; under the condition of reduced accuracy, this method is also applicable to the testing of n-type and p-type epitaxial layer thicknesses between 0.5 μm and 2 μm.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Replaced |
| Standard Code | GB/T 14847-2010 |
| CCS | Semi-metals and semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2011-10-01 |