GB/T 14847-2010 Replaced National standards

GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance

GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance

Publish Date: 2011-01-10 Implement Date: 2011-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 14847-2010

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2011-01-10

Implement Date: 2011-10-01

Pages: 12 pages

Scope

This standard specifies the infrared reflection measurement method for the thickness of lightly doped silicon epitaxial layers on heavily doped substrates.
This standard is applicable to the measurement of the thickness of n-type and p-type silicon epitaxial layers, where the substrate has a resistivity of less than 0.02 Ω·cm at 23 °C and the epitaxial layer has a resistivity of more than 0.1 Ω·cm at 23 °C with a thickness greater than 2 μm; under the condition of reduced accuracy, this method is also applicable to the testing of n-type and p-type epitaxial layer thicknesses between 0.5 μm and 2 μm.

Development Information

Word Count: 17 Thousand words Pages: 12 pages

Replace the following standards

GB/T 14847-1993 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance

Superseded by the following standards

GB/T 14847-2025 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates—Infrared reflectance method

Referenced Standards

GB/T 1552-1995 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array GB/T 6379.2-2004 Accuracy(trueness and precision)of measurement methods and results—Part 2:Basic method for the determination of repeatability and reproducibility of a standard measurement method GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06