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GB/T 32282-2015 Active
GB/T 32282-2015 Test method for dislocation density of GaN single crystal—Cathodoluminescence spectroscopy
Abstract
This standard specifies the method for testing the dislocation density of gallium nitride single crystals using the cathodoluminescence microscopy method.
This standard is applicable to the testing of dislocation density in gallium nitride single crystals with a dislocation density ranging from 1×103 dislocations/cm2 to 5×108 dislocations/cm2.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 32282-2015 |
| CCS | \nTest methods for the physical properties of metals |
| ICS | \nMetal material testing |
| Implement Date | 2016-11-01 |
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