GB/T 14141-2009 Active
GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array
Abstract
This standard specifies the method of measuring the sheet resistance of silicon epitaxial layers, diffusion layers, and ion-implanted layers using a four-probe direct current measurement method.
This standard is applicable to measuring the average sheet resistance of thin layers formed on or under the surface of silicon wafers by epitaxy, diffusion, or ion implantation, with a diameter greater than 15.9 mm. The conductivity type of the silicon wafer substrate should be opposite to that of the measured thin layer. It is suitable for measuring thin layers with a thickness of not less than 0.2 μm, and the measurement range of the square resistance is 10Ω to 5000Ω. This method can also be applied to the measurement of higher or lower resistance square resistance, but its measurement accuracy has not been evaluated yet.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 14141-2009 |
| CCS | Semi-metals and semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2010-06-01 |