GB/T 14141-2009 Active National standards

GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array

Publish Date: 2009-10-30 Implement Date: 2010-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 14141-2009

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Semi-metals and semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2009-10-30

Implement Date: 2010-06-01

Pages: 9 pages

Scope

This standard specifies the method of measuring the sheet resistance of silicon epitaxial layers, diffusion layers, and ion-implanted layers using a four-probe direct current measurement method.
This standard is applicable to measuring the average sheet resistance of thin layers formed on or under the surface of silicon wafers by epitaxy, diffusion, or ion implantation, with a diameter greater than 15.9 mm. The conductivity type of the silicon wafer substrate should be opposite to that of the measured thin layer. It is suitable for measuring thin layers with a thickness of not less than 0.2 μm, and the measurement range of the square resistance is 10Ω to 5000Ω. This method can also be applied to the measurement of higher or lower resistance square resistance, but its measurement accuracy has not been evaluated yet.