GB/T 1557-2018 Active
GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption
Abstract
This standard specifies the method for determining the interstitial oxygen content in silicon single crystals using infrared spectroscopy. This standard is applicable to the determination of interstitial oxygen content in N-type silicon single crystals with a room-temperature resistivity greater than 0.1 Ω·cm and P-type silicon single crystals with a room-temperature resistivity greater than 0.5 Ω·cm. When testing with room-temperature infrared equipment, the oxygen content (atomic number) ranges from 1×1016 cm-3 to the maximum solubility of oxygen in silicon; when testing with low-temperature infrared equipment, the oxygen content (atomic number) ranges from 0.5×1015 cm-3 to the maximum solubility of oxygen in silicon.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 1557-2018 |
| CCS | Analysis methods for semi-metallic and semiconductor materials |
| ICS | \nMetal material testing |
| Implement Date | 2019-06-01 |