GB/T 1557-2018 Active National standards

GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption

GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption

Publish Date: 2018-09-17 Implement Date: 2019-06-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 1557-2018

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Analysis methods for semi-metallic and semiconductor materials

ICS Name: \nMetal material testing

Publish Date: 2018-09-17

Implement Date: 2019-06-01

Pages: 10 pages

Scope

This standard specifies the method for determining the interstitial oxygen content in silicon single crystals using infrared spectroscopy. This standard is applicable to the determination of interstitial oxygen content in N-type silicon single crystals with a room-temperature resistivity greater than 0.1 Ω·cm and P-type silicon single crystals with a room-temperature resistivity greater than 0.5 Ω·cm. When testing with room-temperature infrared equipment, the oxygen content (atomic number) ranges from 1×1016 cm-3 to the maximum solubility of oxygen in silicon; when testing with low-temperature infrared equipment, the oxygen content (atomic number) ranges from 0.5×1015 cm-3 to the maximum solubility of oxygen in silicon.

Development Information

Word Count: 18 Thousand words Pages: 10 pages

Replace the following standards

GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption

Referenced Standards

ASTM E131 GB/T 4059-1983 Polycrystalline silicon—Examination method—Zone-melting on phosphorus under controlled atmosphere GB/T 4059-2007 Polycrystalline silicon—Examination method—Zone-melting on phosphorus under controlled atmosphere GB/T 4059-2018 Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere GB/T 4060-1983 Polycrystalline silicon—Examination method—Vacuum zone-melting on boron GB/T 4060-2007 Polycrystalline silicon—Examination method—Vacuum zone-melting on boron GB/T 4060-2018 Test method for boron content in polycrystalline silicon by vacuum zone-melting method GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 29057-2012 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy GB/T 29057-2023 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy GB/T 35306-2017 Test method for carbon and oxygen content of single crystal silicon—Low temperature fourier transform infrared spectrometry GB/T 35306-2023 Determination of carbon and oxygen content in single crystal silicon—Low temperature fourier transform infrared spectrometry method

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