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GB/T 29849-2013 Active
GB/T 29849-2013 Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
Abstract
This standard specifies the method for determining the content of trace metal impurities on the surface of silicon materials used in photovoltaic cells by using an inductively coupled plasma mass spectrometer (ICPMS).
This standard is applicable to the determination of the content of trace metal impurities such as sodium, magnesium, aluminum, potassium, calcium, titanium, chromium, iron, nickel, copper, and zinc on the surface of silicon materials used in photovoltaic cells. The measurement ranges of each element are shown in Table 1.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 29849-2013 |
| CCS | Element semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2014-04-15 |
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