GB/T 29849-2013 Active National standards

GB/T 29849-2013 Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry

Publish Date: 2013-11-12 Implement Date: 2014-04-15 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 29849-2013

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Element semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2013-11-12

Implement Date: 2014-04-15

Pages: 8 pages

Scope

This standard specifies the method for determining the content of trace metal impurities on the surface of silicon materials used in photovoltaic cells by using an inductively coupled plasma mass spectrometer (ICPMS).
This standard is applicable to the determination of the content of trace metal impurities such as sodium, magnesium, aluminum, potassium, calcium, titanium, chromium, iron, nickel, copper, and zinc on the surface of silicon materials used in photovoltaic cells. The measurement ranges of each element are shown in Table 1.