GB/T 42907-2023 Active

This document describes a method for testing the non-equilibrium carrier recombination lifetime in monocrystalline silicon ingots, silicon blocks, and silicon wafers used in solar cells using non-contact eddy current induction. This document is applicable to the testing of silicon ingots, silicon blocks, and silicon wafers with non-equilibrium carrier recombination lifetimes ranging from 0.1 μs to 10,000 μs and resistivities ranging from 0.1 Ω·cm to 10,000 Ω·cm. Among them, the transient photoconductivity decay method is suitable for testing silicon ingots, silicon blocks, and silicon wafers with non-equilibrium carrier recombination lifetimes less than 100 μs, while the quasi-steady photoconductivity method is suitable for testing silicon ingots, silicon blocks, and silicon wafers with non-equilibrium carrier recombination lifetimes greater than 200 μs. When the non-equilibrium carrier recombination lifetime is between 100 μs and 200 μs, both testing methods are applicable.