GB/T 42907-2023 Active National standards

GB/T 42907-2023 Test method for excess-charge-carrier recombination lifetime in silicon ingots,silicon bricks and silicon wafers—Noncontact eddy-current sensor

Publish Date: 2023-08-06 Implement Date: 2024-03-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

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Basic Information

Standard Code: GB/T 42907-2023

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: \nTest methods for the physical properties of metals

ICS Name: \nMetal material testing

Publish Date: 2023-08-06

Implement Date: 2024-03-01

Pages: 16 pages

Scope

This document describes a method for testing the non-equilibrium carrier recombination lifetime in monocrystalline silicon ingots, silicon blocks, and silicon wafers used in solar cells using non-contact eddy current induction. This document is applicable to the testing of silicon ingots, silicon blocks, and silicon wafers with non-equilibrium carrier recombination lifetimes ranging from 0.1 μs to 10,000 μs and resistivities ranging from 0.1 Ω·cm to 10,000 Ω·cm. Among them, the transient photoconductivity decay method is suitable for testing silicon ingots, silicon blocks, and silicon wafers with non-equilibrium carrier recombination lifetimes less than 100 μs, while the quasi-steady photoconductivity method is suitable for testing silicon ingots, silicon blocks, and silicon wafers with non-equilibrium carrier recombination lifetimes greater than 200 μs. When the non-equilibrium carrier recombination lifetime is between 100 μs and 200 μs, both testing methods are applicable.