GB/T 3656-1983
Replaced
GB/T 42907-2023
Active
National standards
GB/T 42907-2023 Test method for excess-charge-carrier recombination lifetime in silicon ingots,silicon bricks and silicon wafers—Noncontact eddy-current sensor
GB/T 42907-2023 Test method for excess-charge-carrier recombination lifetime in silicon ingots,silicon bricks and silicon wafers—Noncontact eddy-current sensor
Basic Information
Standard Code:
GB/T 42907-2023
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
\nTest methods for the physical properties of metals
ICS Name:
\nMetal material testing
Publish Date:
2023-08-06
Implement Date:
2024-03-01
Publisher:
国家市场监督管理总局、国家标准化管理委员会
Technical Committee:
全国半导体设备与材料标准化技术委员会(SAC/TC 203)、全国半导体设备与材料标准化技术委员会材料分技术委员会(SAC/TC 203/SC 2)
Pages:
16 pages
Scope
本文件描述了用非接触式涡流感应法测试太阳能电池用单晶硅锭、硅块和硅片中非平衡载流子复合寿命的方法。本文件适用于非平衡载流子复合寿命在0.1 μs～10 000 μs、电阻率在0.1 Ω·cm～10 000 Ω·cm的硅锭、硅块和硅片的测试。其中瞬态光电导衰减法适用于非平衡载流子复合寿命小于100 μs时硅锭、硅块和硅片的测试，准稳态光电导法适用于非平衡载流子复合寿命大于200 μs时硅锭、硅块和硅片的测试，非平衡载流子复合寿命在100 μs～200 μs时，两种测试方法均适用。
Development Information
Drafting Units:
TCL中环新能源科技股份有限公司、弘元新材料(包头)有限公司、隆基绿能科技股份有限公司、宜昌南玻硅材料有限公司、浙江海纳半导体股份有限公司、内蒙古中环晶体材料有限公司、四川永祥光伏科技有限公司
Drafting Persons:
张雪囡、王林、王建平、李向宇、杨阳、邓浩、刘文明、赵子龙、郭红强、张石晶、潘金平、李寿琴、赵军
Referenced Standards
GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices
GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13389-2014 Practice for conversion between resistivity and dopant density for boron-doped,phosphorus-doped,and arsenic-doped silicon
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
Related Standards
GB/T 3657-1983
Replaced
GB/T 3657-1983 Measurement method of direct magnetic properties of soft magnetic alloys
GB/T 3849-1983
Replaced
GB/T 3849-1983 Hardmetals—Rockwell hardness (scale A) test method
GB/T 3850-1983
Replaced
GB/T 3850-1983 Impermeable sintered metal materials and hardmetals—determination of density
GB/T 3851-1983
Replaced
GB/T 3851-1983 Hardmetals—determination of transverse rupture strength
GB/T 4326-1984
Replaced