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GB/T 4326-2006
GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
Abstract
The measurement methods specified in this standard are applicable to measuring the Hall coefficient, carrier Hall mobility, resistivity, and carrier concentration of non-intrinsic semiconductor single-crystal materials. The measurement methods specified in this standard have only been experimentally tested on germanium, silicon, gallium arsenide, and gallium phosphide single-crystal materials within a limited scope. However, this method can also be applied to other semiconductor single-crystal materials. Generally, it is suitable for testing semiconductor single-crystal materials with a room-temperature resistivity of up to 104Ω·cm.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Replaced |
| Standard Code | GB/T 4326-2006 |
| CCS | Analysis methods for semi-metallic and semiconductor materials |
| ICS | Comprehensive Testing of Metal Materials |
| Implement Date | 2006-11-01 |
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