GB/T 14140.1-1993
Replaced
GB/T 4326-2006
Replaced
National standards
GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
Basic Information
Standard Code:
GB/T 4326-2006
Standard Type:
National standards
Standard Status:
Replaced
is_force_gb:
no
CCS Name:
Analysis methods for semi-metallic and semiconductor materials
ICS Name:
Comprehensive Testing of Metal Materials
Publish Date:
2006-07-18
Implement Date:
2006-11-01
Pages:
20 pages
Scope
The measurement methods specified in this standard are applicable to measuring the Hall coefficient, carrier Hall mobility, resistivity, and carrier concentration of non-intrinsic semiconductor single-crystal materials. The measurement methods specified in this standard have only been experimentally tested on germanium, silicon, gallium arsenide, and gallium phosphide single-crystal materials within a limited scope. However, this method can also be applied to other semiconductor single-crystal materials. Generally, it is suitable for testing semiconductor single-crystal materials with a room-temperature resistivity of up to 104Ω·cm.
Development Information
Replace the following standards
Superseded by the following standards
Related Standards
GB/T 14140.2-1993
Replaced
GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method
GB/T 15615-1995
Abolished
GB/T 15615-1995 Test method for measuring flexure strength of silicon slices
GB/T 16481-1996
Abolished
GB/T 16481-1996 Standard spectrum tables of microwave plasma torch-atomic emitting spectrum of rare earth
GB/T 1550-1997
Replaced
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1553-1997
Replaced