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GB/T 8758-2006 Active
GB/T 8758-2006 Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
Abstract
This standard is applicable to the measurement of the thickness of the epitaxial layer on GaAs epitaxial wafers, with the measured thickness exceeding 2 μm. The requirements are that the resistivity of the substrate material must be less than 0.02 Ω·cm, and the resistivity of the epitaxial layer must be greater than 0.1 Ω·cm.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 8758-2006 |
| CCS | Analysis methods for semi-metallic and semiconductor materials |
| ICS | Comprehensive Testing of Metal Materials |
| Implement Date | 2006-11-01 |
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