GB/T 14140.1-1993
Replaced
GB/T 8758-2006
Active
National standards
GB/T 8758-2006 Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
GB/T 8758-2006 Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
Basic Information
Standard Code:
GB/T 8758-2006
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Analysis methods for semi-metallic and semiconductor materials
ICS Name:
Comprehensive Testing of Metal Materials
Publish Date:
2006-07-18
Implement Date:
2006-11-01
Pages:
6 pages
Scope
This standard is applicable to the measurement of the thickness of the epitaxial layer on GaAs epitaxial wafers, with the measured thickness exceeding 2 μm. The requirements are that the resistivity of the substrate material must be less than 0.02 Ω·cm, and the resistivity of the epitaxial layer must be greater than 0.1 Ω·cm.
Development Information
Replace the following standards
Related Standards
GB/T 14140.2-1993
Replaced
GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method
GB/T 15615-1995
Abolished
GB/T 15615-1995 Test method for measuring flexure strength of silicon slices
GB/T 16481-1996
Abolished
GB/T 16481-1996 Standard spectrum tables of microwave plasma torch-atomic emitting spectrum of rare earth
GB/T 1550-1997
Replaced
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1553-1997
Replaced