T/CASAS 027-2023 Active
T/CASAS 027-2023 Radiofrequency GaN HEMT epitaxial film non-contact Hall measurement method for two-dimensional electron mobility
Abstract
Main technical content: T/CASAS 027—2023, "Non-contact Hall Measurement Method for Two-Dimensional Electron Gas Mobility of RF GaN HEMT Epitaxial Wafers", describes the testing principle, interference factors, testing procedures, and experimental reports of the non-contact Hall measurement method for the two-dimensional electron gas mobility of RF GaN HEMT epitaxial wafers. It is suitable for measuring the two-dimensional electron gas mobility of GaN HEMT epitaxial wafers on semi-insulating substrates, with a mobility measurement range of 100 cm2?(V?s) to 20,000 cm2?(V?s). The testing method is also applicable to the two-dimensional electron gas mobility measurement of epitaxial wafers of similar structures in other material systems (such as GaAs and InP HEMT structures), provided that the conductivity of the substrate material is semi-insulating.
General Product Information
| Document Type | Group standards |
|---|---|
| Standard Status | Active |
| Standard Code | T/CASAS 027-2023 |
| ICS | Integrated Components of Semiconductor Devices |
| Implement Date | 2023-07-01 |