T/CASAS 005-2022 Active
T/CASAS 005-2022 Dynamic Resistance Test Method for GaN High Electron Mobility Transistors Used in Hard Switching Circuits
Abstract
Scope: This document specifies the dynamic on-resistance test method for gallium nitride (GaN) high electron mobility transistors (HEMTs) used in hard-switching circuits. This document is applicable to scenarios such as production and R&D, characterization, mass production testing, reliability evaluation, and application assessment of GaN HEMTs. It can be used in the following devices: a) GaN enhancement-type and depletion-type discrete power electronics devices; b) GaN integrated power circuits; c) The above-mentioned wafer-level and packaging-level products. Main technical content: This document specifies the dynamic on-resistance test method for gallium nitride (GaN) high electron mobility transistors (HEMTs) used in hard-switching circuits. This document is applicable to scenarios such as production and R&D, characterization, mass production testing, reliability evaluation, and application assessment of GaN HEMTs. It can be used in the following devices: a) GaN enhancement-type and depletion-type discrete power electronics devices; b) GaN integrated power circuits; c) The above-mentioned wafer-level and packaging-level products.
General Product Information
| Document Type | Group standards |
|---|---|
| Standard Status | Active |
| Standard Code | T/CASAS 005-2022 |
| ICS | Integrated Components of Semiconductor Devices |
| Implement Date | 2022-09-16 |