T/CASAS 005-2022 Active Group standards

T/CASAS 005-2022 Dynamic Resistance Test Method for GaN High Electron Mobility Transistors Used in Hard Switching Circuits

Publish Date: 2022-09-16 Implement Date: 2022-09-16 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Price: $ 20.00

Download

Basic Information

Standard Code: T/CASAS 005-2022

Standard Type: Group standards

Standard Status: Active

is_force_gb: no

CCS Name: -

ICS Name: Integrated Components of Semiconductor Devices

Publish Date: 2022-09-16

Implement Date: 2022-09-16

Pages: 13 pages

Scope

Scope: This document specifies the dynamic on-resistance test method for gallium nitride (GaN) high electron mobility transistors (HEMTs) used in hard-switching circuits. This document is applicable to scenarios such as production and R&D, characterization, mass production testing, reliability evaluation, and application assessment of GaN HEMTs. It can be used in the following devices: a) GaN enhancement-type and depletion-type discrete power electronics devices; b) GaN integrated power circuits; c) The above-mentioned wafer-level and packaging-level products. Main technical content: This document specifies the dynamic on-resistance test method for gallium nitride (GaN) high electron mobility transistors (HEMTs) used in hard-switching circuits. This document is applicable to scenarios such as production and R&D, characterization, mass production testing, reliability evaluation, and application assessment of GaN HEMTs. It can be used in the following devices: a) GaN enhancement-type and depletion-type discrete power electronics devices; b) GaN integrated power circuits; c) The above-mentioned wafer-level and packaging-level products.