GB/T 14146-2021 Active
GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method
Abstract
This document specifies the method of testing the carrier concentration of silicon epitaxial layers by capacitance-voltage method, including mercury probe capacitance-voltage method and non-contact capacitance-voltage method.
This document is applicable to the testing of carrier concentration in homogeneous silicon epitaxial layers, with a testing range of 4×1013 cm-3 to 8×1016 cm-3, where the thickness of the silicon epitaxial layer is greater than twice the depth of the depletion layer at the test bias. The testing of carrier concentration in silicon single-crystal wafers and homogeneous silicon carbide epitaxial wafers can also be carried out with reference to this document, but the non-contact capacitance-voltage method is not suitable for testing the carrier concentration in homogeneous silicon carbide epitaxial wafers.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 14146-2021 |
| CCS | \nTest methods for the physical properties of metals |
| ICS | \nMetal material testing |
| Implement Date | 2021-12-01 |