GB/T 3656-1983
Replaced
GB/T 14146-2021
Active
National standards
GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method
GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method
Basic Information
Standard Code:
GB/T 14146-2021
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
\nTest methods for the physical properties of metals
ICS Name:
\nMetal material testing
Publish Date:
2021-05-21
Implement Date:
2021-12-01
Publisher:
国家市场监督管理总局、国家标准化管理委员会
Technical Committee:
全国半导体设备和材料标准化技术委员会(SAC/TC 203)、全国半导体设备和材料标准化技术委员会材料分技术委员会(SAC/TC 203/SC 2)
Pages:
13 pages
Scope
本文件规定了电容电压法测试硅外延层载流子浓度的方法，包括汞探针电容电压法和无接触电容电压法。
本文件适用于同质硅外延层载流子浓度的测试，测试范围为4×1013 cm-3～8×1016 cm-3，其中硅外延层的厚度大于测试偏压下耗尽层深度的两倍。硅单晶抛光片和同质碳化硅外延片载流子浓度的测试也可以参照本文件进行，其中无接触电容电压法不适用于同质碳化硅外延片载流子浓度的测试。
Development Information
Drafting Units:
南京国盛电子有限公司、有色金属技术经济研究院有限责任公司、中电晶华(天津)半导体材料有限公司、有研半导体材料有限公司、河北普兴电子科技股份有限公司、浙江金瑞泓科技股份有限公司、瑟米莱伯贸易(上海)有限公司、无锡华润上华科技有限公司、义乌力迈新材料有限公司
Drafting Persons:
骆红、潘文宾、杨素心、赵扬、赵而敬、张佳磊、李慎重、黄黎、严琴、黄宇程、皮坤林
Replace the following standards
Referenced Standards
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 14847-1993 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T 14847-2025 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates—Infrared reflectance method
Related Standards
GB/T 3657-1983
Replaced
GB/T 3657-1983 Measurement method of direct magnetic properties of soft magnetic alloys
GB/T 3849-1983
Replaced
GB/T 3849-1983 Hardmetals—Rockwell hardness (scale A) test method
GB/T 3850-1983
Replaced
GB/T 3850-1983 Impermeable sintered metal materials and hardmetals—determination of density
GB/T 3851-1983
Replaced
GB/T 3851-1983 Hardmetals—determination of transverse rupture strength
GB/T 4326-1984
Replaced