GB/T 29057-2012
GB/T 29057-2012 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
Abstract
\n[STFZ]2.1[ST] This standard includes the procedures for sampling polycrystalline silicon rods, zone melting the samples into single crystals, and analyzing the drawn single-crystal silicon rods by spectroscopy to determine trace impurities in polycrystalline silicon. These trace impurities include donor impurities (usually phosphorus or arsenic, or both), acceptor impurities (usually boron or aluminum, or both), and carbon impurities.
[STFZ]2.2[ST] The range of impurity concentrations applicable in this standard is: donor and acceptor impurities are (0.002~100) ppba (atoms per billion), and carbon impurities are (0.02~15) ppma (atoms per million). These impurities in the samples are analyzed by low-temperature infrared spectroscopy or photoluminescence spectroscopy.
[STFZ]2.3[ST] This standard is only applicable to the evaluation of polycrystalline silicon rods deposited and grown on silicon cores.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Replaced |
| Standard Code | GB/T 29057-2012 |
| CCS | Semi-metals and semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2013-10-01 |