GB/T 32651-2016 Active
GB/T 32651-2016 Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry
Abstract
This standard specifies a method for measuring trace elements in solar-grade silicon using high-resolution glow discharge mass spectrometry. This standard is applicable to the determination of trace elements in solar-grade silicon materials, including iron (Fe), chromium (Cr), nickel (Ni), copper (Cu), zinc (Zn), boron (B), phosphorus (P), calcium (Ca), sodium (Na), magnesium (Mg), aluminum (Al), arsenic (As), scandium (Sc), titanium (Ti), vanadium (V), manganese (Mn), cobalt (Co), gallium (Ga), etc. The measurement range is 5 μg/kg to 50 mg/kg. This method is suitable for analyzing silicon materials in various physical forms and with any type and concentration of dopants added, such as polycrystalline silicon powders, particles, blocks, ingots, wafers, and monocrystalline silicon rods, blocks, and wafers, etc.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Active |
| Standard Code | GB/T 32651-2016 |
| CCS | Element semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2016-11-01 |