GB/T 11093-1989
Replaced
GB/T 32651-2016
Active
National standards
GB/T 32651-2016 Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry
GB/T 32651-2016 Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry
Basic Information
Standard Code:
GB/T 32651-2016
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Element semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2016-04-25
Implement Date:
2016-11-01
Pages:
11 pages
Scope
This standard specifies a method for measuring trace elements in solar-grade silicon using high-resolution glow discharge mass spectrometry. This standard is applicable to the determination of trace elements in solar-grade silicon materials, including iron (Fe), chromium (Cr), nickel (Ni), copper (Cu), zinc (Zn), boron (B), phosphorus (P), calcium (Ca), sodium (Na), magnesium (Mg), aluminum (Al), arsenic (As), scandium (Sc), titanium (Ti), vanadium (V), manganese (Mn), cobalt (Co), gallium (Ga), etc. The measurement range is 5 μg/kg to 50 mg/kg. This method is suitable for analyzing silicon materials in various physical forms and with any type and concentration of dopants added, such as polycrystalline silicon powders, particles, blocks, ingots, wafers, and monocrystalline silicon rods, blocks, and wafers, etc.
Development Information
Referenced Standards
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced