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GB/T 4059-2007
GB/T 4059-2007 Polycrystalline silicon—Examination method—Zone-melting on phosphorus under controlled atmosphere
Abstract
This standard is applicable to the inspection of the base phosphorus of polycrystalline silicon rods grown on a silicon core by depositing polycrystalline silicon. The effective range of impurity concentration tested by this standard is: 0.002×10-9~100×10-9.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Replaced |
| Standard Code | GB/T 4059-2007 |
| CCS | Analysis methods for semi-metallic and semiconductor materials |
| ICS | Comprehensive Testing of Metal Materials |
| Implement Date | 2008-02-01 |
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