GB/T 4059-2007 Replaced National standards

GB/T 4059-2007 Polycrystalline silicon—Examination method—Zone-melting on phosphorus under controlled atmosphere

Publish Date: 2007-09-11 Implement Date: 2008-02-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 4059-2007

Standard Type: National standards

Standard Status: Replaced

is_force_gb: no

CCS Name: Analysis methods for semi-metallic and semiconductor materials

ICS Name: Comprehensive Testing of Metal Materials

Publish Date: 2007-09-11

Implement Date: 2008-02-01

Pages: 6 pages

Scope

This standard is applicable to the inspection of the base phosphorus of polycrystalline silicon rods grown on a silicon core by depositing polycrystalline silicon. The effective range of impurity concentration tested by this standard is: 0.002×10-9~100×10-9.

Development Information

Word Count: 10 Thousand words Pages: 6 pages

Replace the following standards

GB/T 4059-1983 Polycrystalline silicon—Examination method—Zone-melting on phosphorus under controlled atmosphere

Superseded by the following standards

GB/T 4059-2018 Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere

Referenced Standards

GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method GB/T 1553-1997 Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay GB/T 1553-2023 Test methods for minority carrier lifetime in bulk silicon and germanium—Photoconductivity decay method GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon GB/T 13389-2014 Practice for conversion between resistivity and dopant density for boron-doped,phosphorus-doped,and arsenic-doped silicon GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials

Adopt standards

ASTM F 1723-1996

Related Standards

GB/T 14140.1-1993 Replaced

GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method

Publish Date: 1993-02-06

GB/T 14140.2-1993 Replaced

GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method

Publish Date: 1993-02-06

GB/T 15615-1995 Abolished

GB/T 15615-1995 Test method for measuring flexure strength of silicon slices

Publish Date: 1995-07-12

GB/T 16481-1996 Abolished

GB/T 16481-1996 Standard spectrum tables of microwave plasma torch-atomic emitting spectrum of rare earth

Publish Date: 1996-07-09

GB/T 1550-1997 Replaced

GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials

Publish Date: 1997-06-03

GB/T 1553-1997 Replaced

GB/T 1553-1997 Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay

Publish Date: 1997-06-03