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GB/T 1551-2009
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
Abstract
This method specifies the method of measuring the resistivity of silicon single crystals using the direct four-probe method. This method is suitable for measuring the resistivity of silicon single crystals whose sample thickness and the distance from the edge of the sample to any probe endpoint are both greater than 4 times the probe spacing, as well as measuring the resistivity of silicon single wafers with a diameter greater than 10 times the probe spacing and a thickness less than 4 times the probe spacing. The range of silicon single crystal resistivity that can be measured by this method is 1×10 -3 Ω·cm to 3×10 3 Ω·cm.
General Product Information
| Document Type | National standards |
|---|---|
| Standard Status | Replaced |
| Standard Code | GB/T 1551-2009 |
| CCS | Semi-metals and semiconductor materials |
| ICS | Semiconductor materials |
| Implement Date | 2010-06-01 |
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